the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor np80n04ehe, np80n04khe NP80N04CHE, np80n04dhe, np80n04mhe, np80n04nhe switching n-channel power mos fet data sheet document no. d14239ej7v0ds00 (7th edition) date published october 2007 ns printed in japan the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. 1999, 2007 description these products are n-channel mos field effect tran sistors designed for high curr ent switching applications. ordering information part number lead plating packing package np80n04ehe-e1-ay note1, 2 np80n04ehe-e2-ay note1, 2 to-263 (mp-25zj) typ. 1.4 g np80n04khe-e1-ay note1 np80n04khe-e2-ay note1 pure sn (tin) tape 800 p/reel to-263 (mp-25zk) typ. 1.5 g NP80N04CHE-s12-az note1, 2 sn-ag-cu to-220 (mp-25) typ. 1.9 g np80n04dhe-s12-ay note1, 2 to-262 (mp-25 fin cut) typ. 1.8 g np80n04mhe-s18-ay note1 to-220 (mp-25k) typ. 1.9 g np80n04nhe-s18-ay note1 pure sn (tin) tube 50 p/tube to-262 (mp-25sk) typ. 1.8 g notes 1. pb-free (this product does not cont ain pb in the external electrode.) 2. not for new design features ? channel temperature 175 degree rated ? super low on-state resistance r ds(on) = 8.0 m max. (v gs = 10 v, i d = 40 a) ? low input capacitance c iss = 2200 pf typ. ? built-in gate protection diode (to-220) (to-262) (to-263)
data sheet d14239ej7v0ds 2 np80n04ehe, np80n04khe, NP80N04CHE, np80n04dhe, np80n04mhe, np80n04nh e absolute maximum ratings (t a = 25 c) drain to source voltage (v gs = 0 v) v dss 40 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25c) note1 i d(dc) 80 a drain current (pulse) note2 i d(pulse) 280 a total power dissipation (t a = 25c) p t 1.8 w total power dissipation (t c = 25c) p t 120 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c single avalanche current note3 i as 52/31/13 a single avalanche energy note3 e as 2.7/96/169 mj notes 1. calculated constant current according to max. allowable channel temperature. 2. pw 10 s, duty cycle 1% 3. starting t ch = 25 c, r g = 25 , v gs = 20 0 v (see figure 4. ) thermal resistance channel to case thermal resistance r th(ch-c) 1.25 c/w channel to ambient thermal resistance r th(ch-a) 83.3 c/w
data sheet d14239ej7v0ds 3 np80n04ehe, np80n04khe, NP80N04CHE, np80n04dhe, np80n04mhe, np80n04nh e electrical characteristics (t a = 25 c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 10 a gate to source leakage current i gss v gs = 20 v, v ds = 0 v 10 a gate to source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 3.0 4.0 v forward transfer admittance | y fs | v ds = 10 v, i d = 40 a 15 31 s drain to source on-state resistance r ds(on) v gs = 10 v, i d = 40 a 6.2 8.0 m input capacitance c iss v ds = 25 v, 2200 3300 pf output capacitance c oss v gs = 0 v, 490 730 pf reverse transfer capacitance c rss f = 1 mhz 230 410 pf turn-on delay time t d(on) v dd = 20 v, i d = 40 a, 24 52 ns rise time t r v gs = 10 v, 14 36 ns turn-off delay time t d(off) r g = 1 44 88 ns fall time t f 15 37 ns total gate charge q g v dd = 32 v, 40 60 nc gate to source charge q gs v gs = 10 v, 12 nc gate to drain charge q gd i d = 80 a 16 nc body diode forward voltage v f(s-d) i f = 80 a, v gs = 0 v 1.0 v reverse recovery time t rr i f = 80 a, v gs = 0 v, 40 ns reverse recovery charge q rr di/dt = 100 a/ s 50 nc test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d14239ej7v0ds 4 np80n04ehe, np80n04khe, NP80N04CHE, np80n04dhe, np80n04mhe, np80n04nh e typical characteristics (t a = 25 c) figure2. total power dissipation vs. case temperature t c - case temperature - c p t - total power dissipation - w 0 0 25 50 75 100 125 150 175 200 140 120 100 80 60 40 20 figure1. derating factor of forward bias safe operating area dt - percentage of rated power - % 0 0 25 50 75 100 125 150 175 200 20 40 60 80 100 figure4. single avalanche energy derating factor starting t ch - starting channel temperature - c single pulse avalanche energy - mj 0 25 60 80 100 120 140 160 180 50 75 100 125 150 175 20 40 t c - case temperature - c i as = 13 a 169 mj 96 mj 2.7 mj 31 a 52 a figure5. transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - c/w 10 0.01 0.1 1 100 1000 1 m 10 m 100 m 1 10 100 1000 single pulse r th(ch-a) = 83.3 c/w 10 100 r th(ch-c) = 1.25 c/w 0.1 0.1 1 10 100 1000 1 10 100 figure3. forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a i d(pulse) i d(dc) pw = 10 s dc 100 s 1 ms r ds(on) limited (v gs = 10 v) power dissipation limited t c = 25 c single pulse
data sheet d14239ej7v0ds 5 np80n04ehe, np80n04khe, NP80N04CHE, np80n04dhe, np80n04mhe, np80n04nh e figure10. drain to source on-state resistance vs. drain current figure11. gate to source threshold voltage vs. channel temperature i d - drain current - a r ds(on) - drain to source on-state resistance - m 10 10 1 20 100 1000 pulsed 0 v gs = 10 v figure9. drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m 0 0 6 24 81012141618 pulsed 10 20 30 40 50 i d = 40 a t ch - channel temperature - c v gs(th) - gate to source threshold voltage - v ? 50 0 50 100 150 1.0 v ds = v gs i d = 250 a 2.0 3.0 4.0 0 figure8. forward transfer admittance vs. drain current i d - drain current - a | y fs | - forward transfer admittance - s v ds = 10 v pulsed 0.01 0.1 1 10 100 10 100 0.01 0.1 1 75 c 25 c ? 40 c figure7. drain current vs. drain to source voltage figure6. forward transfer characteristics v ds - drain to source voltage - v i d - drain current - a v gs - gate to source voltage - v i d - drain current - a 1 0.1 0 0 2 3 4 100 10 100 1000 pulsed 250 300 200 150 1 pulsed 2 v gs = 10 v 34 6 5 1 v ds = 10 v 50 t a = ? 40 c 25 c 75 c 150 c 175 c t a = 175 c
data sheet d14239ej7v0ds 6 np80n04ehe, np80n04khe, NP80N04CHE, np80n04dhe, np80n04mhe, np80n04nh e figure12. drain to source on-state resistance vs. channel temperature t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m figure13. source to drain diode forward voltage figure14. capacitance vs. drain to source voltage figure15. switching characteristics 0 ? 50 4 8 12 0 50 100 150 i d = 40 a figure16. reverse recovery time vs. diode forward current 16 figure17. dynamic input/output characteristics 1.5 i f - diode forward current - a 0 v f(s-d) - source to drain voltage - v 1.0 0.5 0.1 1 10 100 1000 v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 0.1 10 1 10 100 100 v gs - gate to source voltage - v i f - diode forward curren - a t rr - reverse recovery time - ns di/dt = 100 a/ s v gs = 0 v 1 0.1 10 1.0 10 100 q g - gate charge - nc v ds - drain to source voltage - v 0 0 40 20 10 30 20 40 60 80 2 4 v ds 1000 100 6 10 12 14 16 8 v gs v dd = 32 v 20 v 8 v pulsed 100 1000 10000 v gs = 0 v f = 1 mhz c oss c rss c iss 10 1 1 0.1 100 1000 10 t f t r t d(on) t d(off) v gs = 10 v i d = 80 a pulsed 0 v v gs = 10 v v dd = 20 v v gs = 10 v r g = 1
data sheet d14239ej7v0ds 7 np80n04ehe, np80n04khe, NP80N04CHE, np80n04dhe, np80n04mhe, np80n04nh e package drawings (unit: mm) 1)to-263 (mp-25zj) note 2)to-263 (mp-25zk) 1.4 0.2 1.0 0.5 2.54 typ. 2.54 typ. 8.5 0.2 123 5.7 0.4 4 4.8 max. 1.3 0.2 0.5 0.2 1.gate 2.drain 3.source 4.fin (drain) 0.7 0.2 10 typ. 0.5r typ. 0.8r typ. 2.8 0.2 10.0 0.3 8.0 typ. 2.54 0.75 0.2 9.15 0.3 2.54 0.25 15.25 0.5 1.35 0.3 123 4 2.5 4.45 0.2 1.3 0.2 0.5 0.2 0 to 8 1.gate 2.drain 3.source 4.fin (drain) no plating 7.88 min. 0.025 to 0.25 0.25 3)to-220 (mp-25) note 4)to-262 (mp-25 fin cut) note 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10.6 max. 10.0 typ. 3.6 0.2 4 3.0 0.3 1.3 0.2 0.75 0.1 2.54 typ. 2.54 typ. 5.9 min. 6.0 max. 15.5 max. 12.7 min. 1.3 0.2 0.5 0.2 2.8 0.2 4.8 max. 1.gate 2.drain 3.source 4.fin (drain) 1 2 3 10 typ. 1.3 0.2 0.75 0.3 2.54 typ. 2.54 typ. 8.5 0.2 12.7 min. 1.3 0.2 0.5 0.2 2.8 0.2 1.0 0.5 4 note not for new design
data sheet d14239ej7v0ds 8 np80n04ehe, np80n04khe, NP80N04CHE, np80n04dhe, np80n04mhe, np80n04nh e 5)to-220 (mp-25k) 6)to-262 (mp-25sk) 4 2.8 0.3 10.0 0.2 3.8 0.2 6.3 0.3 4.45 0.2 1.3 0.2 0.8 0.1 0.5 0.2 2.5 0.2 1.27 0.2 3.1 0.2 15.9 max. 123 13.7 0.3 2.54 typ. 2.54 typ. 1.gate 2.drain 3.source 4.fin (drain) 4 123 10.0 0.2 4.45 0.2 1.3 0.2 13.7 0.3 0.8 0.1 1.27 0.2 0.5 0.2 2.5 0.2 2.54 typ. 2.54 typ. 1.2 0.3 8.9 0.2 10.1 0.3 3.1 0.3 1.gate 2.drain 3.source 4.fin (drain) equivalent circuit source body diode gate protection diode gate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
data sheet d14239ej7v0ds 9 np80n04ehe, np80n04khe, NP80N04CHE, np80n04dhe, np80n04mhe, np80n04nh e tape information there are two types (-e1, -e2) of taping depending on the direction of the device. reel side draw-out side marking information 80n04 lot code nec he pb-free plating marking abbreviation of part number recommended soldering conditions these products should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than th ose recommended below, please contact an nec electronics sales representative. for technical information, see the following website. semiconductor device mount manual (http:// www.necel.com/pkg/en/mount/index.html) soldering method soldering conditions recommended condition symbol infrared reflow mp-25zj, mp-25zk maximum temperature (package's surface temperature): 260 c or below time at maximum temperature: 10 seconds or less time of temperature higher than 220 c: 60 seconds or less preheating time at 160 to 180 c: 60 to 120 seconds maximum number of reflow processes: 3 times maximum chlorine content of rosin flux (percentage mass): 0.2% or less ir60-00-3 wave soldering mp-25, mp-25k, mp-25sk, mp-25 fin cut maximum temperature (solder temperature): 260 c or below time: 10 seconds or less maximum chlorine content of rosin flux: 0.2% (wt.) or less thdws partial heating mp-25zj, mp-25zk, mp-25k, mp-25sk maximum temperature (pin temperature): 350 c or below time (per side of the device): 3 seconds or less maximum chlorine content of rosin flux: 0.2% (wt.) or less p350 partial heating mp-25, mp-25 fin cut maximum temperature (pin temperature): 300 c or below time (per side of the device): 3 seconds or less maximum chlorine content of rosin flux: 0.2% (wt.) or less p300 caution do not use different soldering me thods together (except for partial heating).
np80n04ehe, np80n04khe, NP80N04CHE, np80n04dhe, np80n04mhe, np80n04nh e the information in this document is current as of october, 2007. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec electronics data sheets or data books, etc., for the most up-to-date specifications of nec electronics products. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec electronics. nec electronics assumes no responsibility for any errors that may appear in this document. nec electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec electronics products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec electronics or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. nec electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec electronics endeavors to enhance the quality, reliability and safety of nec electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. nec electronics products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to nec electronics products developed based on a customer- designated "quality assurance program" for a specific application. the recommended applications of an nec electronics product depend on its quality grade, as indicated below. customers must check the quality grade of each nec electronics product before using it in a particular application. the quality grade of nec electronics products is "standard" unless otherwise expressly specified in nec electronics data sheets or data books, etc. if customers wish to use nec electronics products in applications not intended by nec electronics, they must contact an nec electronics sales representative in advance to determine nec electronics' willingness to support a given application. (note) ? ? ? ? ? ? m8e 02. 11-1 (1) (2) "nec electronics" as used in this statement means nec electronics corporation and also includes its majority-owned subsidiaries. "nec electronics products" means any product developed or manufactured by or for nec electronics (as defined above). computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "standard": "special": "specific":
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